Numerical simulationFinal report: Comparison simulation data of Si4N3 dielectric material(doi: 10.17188/1197656)I. IntroductionSilicon nitride (Si3N4) is a non-metallic compound composed of silicon and nitrogen. This material is interesting because of its durability, electrical insulation, high thermal stability and high acid resistance that widely used in microelectronics and micro-surface machining technologies.The micro-bolometer devices were fabricated at nano and energy center (NEC) of Vietnam national university (VNU) used Si3N4 shut as a supporting layer for the suspending structure and in absorption infrared radiation (IR) packet. The fabrication method used plasma enhanced chemical vapour deposition (PECVD) system that require high vacuum. The optimization of IR absorption packet by experimental is extremely expensive. Thus, the properties of Si3N4 crystal structure need to investigate by simulation and compare to experiment data.For more information on Crystal Structure check on: https://en.wikipedia.org/wiki/Crystal_structure
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