Carrier Recombination

Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the inside. The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I and the incremental resistance (rd) of the diode and why are they different? For more information on Carrier Recombination read this: https://en.wikipedia.org/wiki/Carrier_generation_and_recombination

 

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